IndiumV3, Russie, Analysis, bibRecord, 000129

Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Identifieur interne : 000129 ( Russie/Analysis ); précédent : 000128; suivant : 000130

Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Auteurs : RBID : Pascal:10-0130752

Descripteurs français

Pascal (Inist)
- Effet température, Intensité intégrée, Energie activation, Elargissement raie, Photoluminescence, Interaction exciton phonon, Structure électronique, Point quantique, Arséniure d'indium, InAs.

English descriptors

KwdEn :
- Activation energy, Electronic structure, Exciton phonon interaction, Indium arsenides, Integrated intensity, Line broadening, Photoluminescence, Quantum dots, Temperature effects.

Abstract

The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account exciton-phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays.

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to stream Main, to step Corpus: 004885
to stream Main, to step Repository: 004803
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Pascal:10-0130752

Le document en format XML

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mperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing</title>
<author><name sortKey="Smirnov, M B" uniqKey="Smirnov M">M. B. Smirnov</name>
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<author><name sortKey="Talalaev, V G" uniqKey="Talalaev V">V. G. Talalaev</name>
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<term>Electronic structure</term>
<term>Exciton phonon interaction</term>
<term>Indium arsenides</term>
<term>Integrated intensity</term>
<term>Line broadening</term>
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<term>Energie activation</term>
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<term>Photoluminescence</term>
<term>Interaction exciton phonon</term>
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<front><div type="abstract" xml:lang="en">The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self-ordered quantum dots arrays taking into account exciton-phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature-induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays.</div>
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mperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing</s1>
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Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri